Exciton binding energy in type-II GaAs-(Al,Ga)As quantum-well heterostructures
- 15 March 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 35 (8) , 4152-4154
- https://doi.org/10.1103/physrevb.35.4152
Abstract
The binding energy of the ground-state exciton is calculated variationally for the GaAs-(Al,Ga)As system when the band-edge configuration at the heterojunction has become staggered or ‘‘type II.’’ Anisotropy in both the hole and electron effective masses is considered and calculations are performed assuming perfect confinement of both sorts of carriers. The binding energies we calculate are of a similar magnitude to those found for the 1s heavy-hole (or 1s light-hole) exciton in this system when the configuration is the more familiar straddled of type-I arrangement.Keywords
This publication has 8 references indexed in Scilit:
- Unambiguous observation of thestate of the light- and heavy-hole excitons in GaAs-(AlGa) As multiple-quantum-well structuresPhysical Review B, 1986
- Pressure dependence of GaAs/AlxGa1−xAs quantum-well bound states: The determination of valence-band offsetsJournal of Vacuum Science & Technology B, 1986
- Light scattering determination of band offsets inquantum wellsPhysical Review B, 1986
- Staggered band alignments in AlGaAs heterojunctions and the determination of valence-band offsetsApplied Physics Letters, 1986
- Reappraisal of the band-edge discontinuities at theAs-GaAs heterojunctionPhysical Review B, 1985
- Exciton binding energy in quantum wellsPhysical Review B, 1982
- Indirect exciton fine structure in GaP and the effect of uniaxial stressPhysical Review B, 1978
- Anisotropic effective masses of electrons in AlAsPhysica Status Solidi (b), 1972