Metal semiconductor contact: Resistivity and noise
- 1 December 1973
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 16 (12) , 1399-1405
- https://doi.org/10.1016/0038-1101(73)90054-3
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Anisotropy in diffusion-noise temperature and differential mobility induced in semiconductors by an external electric fieldPhysica, 1973
- Alternating-Current Method for Separating the Contact Influence from Bulk Properties of SemiconductorsJournal of Applied Physics, 1969
- Some Properties of Dirty Contacts on Semiconductors and Resistivity Measurements by a Two-Terminal MethodJournal of Applied Physics, 1962
- Excess Noise Spectra in GermaniumProceedings of the Physical Society. Section B, 1956