Self-focusing effects in pulsating AlxGa1-xAs double-heterostructure lasers
- 1 January 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 17 (1) , 60-68
- https://doi.org/10.1109/jqe.1981.1070631
Abstract
No abstract availableKeywords
This publication has 38 references indexed in Scilit:
- Theory of defect-induced pulsations in semiconductor injection lasersJournal of Applied Physics, 1980
- Intensity Pulsation Enhancement by Self-Focusing in Semiconductor Injection LasersJapanese Journal of Applied Physics, 1980
- Effects of lateral mode and carrier density profile on dynamic behaviors of semiconductor lasersIEEE Journal of Quantum Electronics, 1978
- The effects of lateral current spreading, carrier out-diffusion, and optical mode losses on the threshold current density of GaAs-AlχGa1−χAs stripe-geometry DH lasersJournal of Applied Physics, 1978
- Observations of self-focusing in stripe geometry semiconductor lasers and the development of a comprehensive model of their operationIEEE Journal of Quantum Electronics, 1977
- Waveguiding in a stripe-geometry junction laserIEEE Journal of Quantum Electronics, 1977
- Gain−induced guiding and astigmatic output beam of GaAs lasersJournal of Applied Physics, 1975
- Carrier and gain spatial profiles in GaAs stripe geometry lasersJournal of Applied Physics, 1973
- Mode guidance parallel to the junction plane of double-heterostructure GaAs lasersJournal of Applied Physics, 1973
- A theory of the transient evolution and self-focussing behaviour of lasing filaments in injection lasersPhysica Status Solidi (a), 1973