Laser gain and current density in a disordered AlGaAs/GaAs quantum well

8 July 1993

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 29 (14) , 1233-1234
https://doi.org/10.1049/el:19930824

Abstract

The laser gain and current density at room temperature are analysed for disordered (interdiffusion induced) Al_0.3Ga_0.7As/GaAs single quantum well structures at a carrier injection level of 4 × 10¹² cm⁻². The results show that both the peak gain and current density remain about the same strength during the initial stages of disordering, and provide a bandwidth of 55 nm.

Keywords

SINGLE QUANTUM WELL STRUCTURES
DISORDERED
CARRIER INJECTION LEVEL
ALGAAS-GAAS
CURRENT DENSITY
LASER GAIN
SEMICONDUCTOR LASERS

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