Monolayer heterointerfaces and thin layers (∼10 Å) in Al x Ga 1−x As-GaAs superlattices grown by metalorganic chemical vapour deposition
- 1 March 1984
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 20 (5) , 204-205
- https://doi.org/10.1049/el:19840135
Abstract
Transmission electron microscopy (TEM) and lattice fringe images are used to show that metalorganic chemical vapour deposition (MOCVD) is capable of growing highly uniform AlxGa1−xAs-GaAs quantum-well heterostructures (QWHs) and superlattices (SLs) with monolayer heterointerfaces and layers as thin as ∼10 Å.Keywords
This publication has 1 reference indexed in Scilit:
- Ga1-xAlxAs-GaAs Heterostructure Lasers Grown by Metalorganic Chemical Vapor DepositionPublished by Japan Society of Applied Physics ,1979