AlN capped annealing of Se and Sn implanted semi-insulating GaAs

3 February 1983

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 19 (3) , 112-113
https://doi.org/10.1049/el:19830080

Abstract

High-dose room-temperature implants of Se and Sn in undoped semi-insulating GaAs have been pulse-annealed at 1000°C using AlN as an encapsulant. Good electrical results and an improved surface quality were achieved compared with the use of CVD Si₃N₄ layers.

Keywords

ALN
ENCAPSULANT
CVD SI3N4 LAYERS
SURFACE QUALITY
ION IMPLANTATION
III-V SEMICONDUCTOR
GAAS:SE
SEMIINSULATING

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