Light emission from hot electrons in zinc selenide

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Abstract
A broad, structured, emission band extending from 0.4-2.65 eV has been observed when Schottky diodes on n-type ZnSe without deliberately added impurities are driven in reverse bias. Evidence is given that the emission results from transitions of electrons within the conduction bands. In contrast with previous interpretations, it is suggested that the predominant transitions occur between valleys at different points in the Brillouin zone. Structure in the emission is correlated with conduction band structure. A comparison of calculated and observed emission intensities supports the proposed interpretation. Measurements of this type of electroluminescence provide a new means of studying band structure which should be applicable to a wide range of semiconductors.