Instabilites temporelles des transistors MOS—II: Le comportement dissymetrique
- 30 April 1970
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 13 (4) , 425-438
- https://doi.org/10.1016/0038-1101(70)90153-x
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Instabilities temporelles des transistors MOS—I: Le comportement lineaireSolid-State Electronics, 1970
- Drift phenomena in CdSe thin film FET'sSolid-State Electronics, 1967
- The equivalent circuit model in solid-state electronics—Part I: The single energy level defect centersProceedings of the IEEE, 1967
- Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistorsSolid-State Electronics, 1966
- Recombination in SemiconductorsProceedings of the IRE, 1958