High efficiency AlGaAs/Si monolithic tandem solar cell grown by metalorganic chemical vapor deposition
- 15 September 1995
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 78 (6) , 4196-4199
- https://doi.org/10.1063/1.359880
Abstract
The improvements of the AlGaAs solar cell grown on the Si substrate and the AlGaAs/Si tandem solar cell by metalorganic chemical vapor deposition have been investigated. The active‐area conversion efficiency of the Al0.1Ga0.9As solar cell on the Si substrate as high as 12.9% has been obtained by improving the growth sequence and adopting an Al compositionally graded band emitter layer. A high efficiency monolithic AlGaAs/Si tandem solar cell with the active‐area conversion efficiency of 19.9% and 20.6% (AM0 and 1 sun at 27 °C) under two‐terminal and four‐terminal configurations, respectively, is demonstrated.This publication has 3 references indexed in Scilit:
- Three-terminal monolithic cascade GaAs/Si solar cellsSolar Energy Materials and Solar Cells, 1994
- Time-resolved photoluminescence characterization of GaAs and AlGaAs on Si substrate grown by MOCVDSolar Energy Materials and Solar Cells, 1994
- 29.5%-efficient GaInP/GaAs tandem solar cellsApplied Physics Letters, 1994