Lasing wavelengths of index-guided AlGaInP semiconductor lasers as functions of off-angle from (100) plane of GaAs substrate
- 6 July 1989
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 25 (14) , 905-907
- https://doi.org/10.1049/el:19890607
Abstract
The lasing wavelengths of AIGalnP semiconductor lasers are investigated as functions of the off-angle in the direction of [110] from the (100) plane of the GaAs substrate. The lasing wavelengths decrease to about 650nm as the off-angle increases to 10–15°. The influence of the off-angle on the laser transverse mode is also discussed.Keywords
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