Time-Dependent Development of the Coulomb Gap
- 17 May 1999
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 82 (20) , 4074-4077
- https://doi.org/10.1103/physrevlett.82.4074
Abstract
We show that the time development of the Coulomb gap in a Coulomb glass can involve very long relaxation times due to electron rearrangement and hopping. We find that an applied magnetic field reduces the rate of electron hopping and, hence, Coulomb gap formation. These results are consistent with recent conductance experiments on thin semiconducting and metallic films.Keywords
All Related Versions
This publication has 7 references indexed in Scilit:
- Evidence for Interactions in Nonergodic Electronic TransportPhysical Review Letters, 1998
- Coulomb-glass-like behavior of ultrathin films of metalsPhysical Review B, 1998
- Disorder and Magnetic Field Dependence of Slow Electronic RelaxationPhysical Review Letters, 1997
- Dipole gap effects in low energy excitation spectrum of amorphous solids. Theory for dielectric relaxationJournal of Low Temperature Physics, 1995
- Electronic Properties of Doped SemiconductorsPublished by Springer Nature ,1984
- Coulomb gap and low temperature conductivity of disordered systemsJournal of Physics C: Solid State Physics, 1975
- Effect of carrier-carrier interactions on some transport properties in disordered semiconductorsDiscussions of the Faraday Society, 1970