High aspect ratio 0.1 μm tungsten gates for InGaAs/InAlAs heterojunction transistors

• 1 November 1989
• journal article
• Published by American Vacuum Society in Journal of Vacuum Science & Technology B
• Vol. 7  (6) , 1836-1840
• https://doi.org/10.1116/1.584676

Abstract

Keywords

• HIGH ASPECT RATIO