Measurements of dg/dN and dn/dN and their dependence on photon energy in λ =1.5[micro sign]m InGaAsP laser diodes

1 January 1986

journal article
Published by Institution of Engineering and Technology (IET) in IEE Proceedings J Optoelectronics

Vol. 133 (2) , 135-142
https://doi.org/10.1049/ip-j.1986.0022

Abstract

The first measurements of the dispersion of dg/dN and dn/dN, the variation in the gain and refractive index with injected carrier concentration, are reported for λ = 1.5 µm InGaAsP laser diodes. Particular attention has been paid to the accurate evaluation of the injected carrier concentration N through the direct measurement of the carrier lifetime coupled with the use of the ridge-waveguide laser structure, which benefits from real-index lateral waveguiding, together with low parallel leakage currents and low parasitic capacitance. The values of dg/dN and dn/dN, at the lasing wavelength, were determined to be 2.7 × 10⁻¹⁶cm² and − 1.8 × 10⁻²⁰cm³respectively.

Keywords

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