InGaAs junction FETs with frequency limit (MAG = 1) above 30 GHz
- 9 May 1985
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 21 (10) , 449-451
- https://doi.org/10.1049/el:19850320
Abstract
InGaAs JFETs were made by LPE growth of the n-channel and zinc diffusion from spin-on films at low temperatures for the p+-gate. Extrinsic transconductances in excess of 100 mS/mm for gate lengths of 1.2 μm and frequency limits (MAG = 1) above 30 GHz were obtained. The good agreement between experimentally determined data and those calculated from material parameters and device dimensions indicates that a low temperature and/or short time process for gate formation is a necessary prerequisite in InGaAs JFET technology.Keywords
This publication has 1 reference indexed in Scilit:
- Field-Effect Transistors with a Two-Dimensional Electron Gas as ChannelPublished by Springer Nature ,1984