Encapsulation of ion-implanted GaAs using native oxides
- 24 July 1975
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 11 (15) , 323-324
- https://doi.org/10.1049/el:19750247
Abstract
It was found that oxidation at 500 to 600°C produced uniform layers, which, when used as protective coatings for ion-implanted GaAs, gave rise to donor activity, but with poor reproducibility. The addition of a thin layer of evaporated aluminium to the oxide layer gave donor activities very similar to results obtained with other coating materials and with good reproducibility.Keywords
This publication has 0 references indexed in Scilit: