Compensation degradation mechanism for high-efficiency GaAs IMPATT diodes
- 1 February 1979
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 15 (3) , 74-75
- https://doi.org/10.1049/el:19790054
Abstract
The reliability of Cr Schottky-barrier high-efficiency (hi-lo) GaAs IMPATTs has been investigated. Devices operated under d.c. conditions degraded due to compensation of the electron concentration in the avalanche region of the devices. This degradation was not observed in diodes oven-tested with no bias applied.Keywords
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