Ultra-high doping levels of GaAs with beryllium by molecular beam epitaxy

9 May 1985

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 21 (10) , 413-414
https://doi.org/10.1049/el:19850293

Abstract

P-type doping levels up to 2×10²⁰ at cm⁻³ in GaAs are presented using molecular beam epitaxy and beryllium as acceptor impurity. The epilayers present a perfect surface morphology and Be is not found to diffuse into the substrate, which permits the incorporation of such films into multilayer structures for device applications.

Keywords

DEVICE APPLICATIONS
MULTILAYER STRUCTURES
PERFECT SURFACE MORPHOLOGY
MOLECULAR BEAM EPITAXY
MBE
P-TYPE DOPANT
BE ACCEPTOR IMPURITY
EPILAYERS
GAAS
ULTRAHIGH DOPING LEVELS
GAAS:BE
III-V SEMICONDUCTORS

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