Electrical and optical characteristics of a schottky barrier on a cleaved surface of the layered semiconductor InSe
- 16 April 1982
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 70 (2) , 615-621
- https://doi.org/10.1002/pssa.2210700230
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Photovoltaic effect in InSe - Application to Solar Energy ConversionRevue de Physique Appliquée, 1979
- Large InSe monocrystals grown from a non-stoichiometric meltJournal of Crystal Growth, 1977
- Photovoltaic properties of GaSe and InSe junctionsIl Nuovo Cimento B (1971-1996), 1977
- The physical significance of the T0 anomalies in Schottky barriersSolid-State Electronics, 1977
- A note on Levine’s model of Schottky barriersJournal of Applied Physics, 1975
- Schottky-Barrier Anomalies and Interface StatesJournal of Applied Physics, 1971
- Forward current-voltage characteristics of Schottky barriers on n-type siliconSurface Science, 1969
- Graphical Determination of the Barrier Height and Excess Temperature of a Schottky BarrierJournal of Applied Physics, 1966
- Interacting Partial Dislocations in GaSeJournal of Applied Physics, 1963