The transient behavior of high-field dipole domains in transferred electron devices
- 1 January 1973
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 20 (1) , 1-5
- https://doi.org/10.1109/T-ED.1973.17600
Abstract
This paper provides an explanation for previously unexplained aspects of the transient experiments of Kuru, Robson, and Kino [1]. It is shown that in a transient experiment on a dipole domain in a transferred electron device, the ratio of change in charge at the domain to the charge transferred at the external terminals is strongly dependent on the magnitude of the bias step. For a small bias step the charge transferred at the external terminals is nearly equal to the change in domain charge, while for a quenching transient the charge transferred at the external terminals is about one-half the initial domain charge.Keywords
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