Grazing-incidence X-ray diffraction on ion-implanted silicon

• 1 February 1993
• journal article
• Published by International Union of Crystallography (IUCr) in Journal of Applied Crystallography
• Vol. 26  (1) , 34-40
• https://doi.org/10.1107/s0021889892007799

Abstract

Keywords

• CRYSTAL STRUCTURE
• SILICON
• TRANSMISSION ELECTRON MICROSCOPY
• DISTORTED
• SURFACE LAYER
• GRAZING INCIDENCE
• EXIT ANGLES
• RECRYSTALLIZATION
• KEV SI