Accurate noise measurements on transistors
- 1 March 1962
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IRE Transactions on Electron Devices
- Vol. 9 (2) , 123-128
- https://doi.org/10.1109/t-ed.1962.14959
Abstract
This paper is concerned with a method of noise measurement which permits improved accuracy by circumventing some of the problems of the usual comparison techniques. Results are presented of measurements of Ieqand Rnshowing good agreement between theory and experiment. It is suggested that noise measurements may be a very satisfactory method of determining the effective base resistance for inhomogeneous structures. The theoretical representation of the noise sources, including the effect of generation-recombination in the emitter-base region, is summarized in the appendix.Keywords
This publication has 8 references indexed in Scilit:
- Shot and Thermal Noise in Germanium and Silicon Transistors at High-Level Current InjectionsProceedings of the IRE, 1960
- Theory and Experiments on Shot Noise in Silicon P-N Junction Diodes and TransistorsProceedings of the IRE, 1959
- Noise in Junction TransistorsProceedings of the IRE, 1958
- Carrier Generation and Recombination in P-N Junctions and P-N Junction CharacteristicsProceedings of the IRE, 1957
- Behavior of Noise Figure in Junction TransistorsProceedings of the IRE, 1957
- Theory and Experiments on Shot Noise in Semiconductor Junction Diodes and TransistorsProceedings of the IRE, 1957
- Shot Noise in TransistorsProceedings of the IRE, 1957
- Note on Shot and Partition Noise in Junction TransistorsJournal of Applied Physics, 1954