Substitutional Impurities in Si: Impurity-Host Bond Lengths and Spring Constants
- 7 January 1992
- journal article
- Published by IOP Publishing in Europhysics Letters
- Vol. 17 (2) , 157-162
- https://doi.org/10.1209/0295-5075/17/2/013
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Chemical trends of deep impurity levels in covalent semiconductorsPublished by Springer Nature ,2007
- Theory of Be-induced defects in SiPhysical Review B, 1990
- Lattice relaxation around substitutional defects in semiconductorsPhysical Review B, 1989
- A spectroscopic investigation of the lattice distortion at substitutional sites for groups V and VI donors in siliconJournal of Physics C: Solid State Physics, 1987
- Lattice distortions for arsenic in single-crystal siliconPhysical Review B, 1986
- Theory of 3d Transition Atom Impurities in SemiconductorsAnnual Review of Materials Science, 1985
- Bond lengths, force constants and local impurity distortions in semiconductorsJournal of Physics C: Solid State Physics, 1984
- Diffraction by a finite crystal: general Laue–Bragg case – comparison with approximate extinction theoriesActa Crystallographica Section A Foundations of Crystallography, 1984
- Nonlinear ionic pseudopotentials in spin-density-functional calculationsPhysical Review B, 1982
- New Set of Tetrahedral Covalent RadiiPhysical Review B, 1970