Threshold Energy for Avalanche Multiplication in Semiconductors
- 1 February 1966
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 37 (2) , 507-509
- https://doi.org/10.1063/1.1708204
Abstract
The threshold energy for carrier multiplication Ei in Ge, Si, and GaAs is calculated theoretically. The theoretical values of Ei are obtained from a consideration of the semiconductor energy band structure along with energy and crystal momentum conservation in the ionization process. Calculated values are found to be consistent with experimental data.This publication has 5 references indexed in Scilit:
- Ionization Rates of Holes and Electrons in SiliconPhysical Review B, 1964
- Distribution Functions and Ionization Rates for Hot Electrons in SemiconductorsPhysical Review B, 1962
- Problems related to p-n junctions in siliconSolid-State Electronics, 1961
- Threshold Energy for Electron-Hole Pair-Production by Electrons in SiliconPhysical Review B, 1957
- Theory of Electron Multiplication in Silicon and GermaniumPhysical Review B, 1954