Effective mass in ann-type HgTe-CdTe superlattice

Far-infrared free-carrier data combined with Hall data yield the effective mass for an n-type HgTe-CdTe superlattice. The result, at 300 K and at a carrier concentration of 3.4×${10}^{16}$ ${\mathrm{cm}}^{\mathrm{-}3}$, is $m^{\mathrm{*}}$/$m_0$=0.030 in the superlattice plane, a value significantly different from effective masses in HgTe and CdTe and consistent with superlattice band-structure calculations. This result and semiconductorlike carrier freeze-out show that the individual layer properties are described by a semiconducting superlattice band structure.