Improvement of intermodulation distortion in microwave m.e.s.f.e.t. amplifiers using gate-bias compensation
- 8 November 1979
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 15 (23) , 741-742
- https://doi.org/10.1049/el:19790530
Abstract
A simple technique is described for improving the intermodulation distortion performance of microwave m.e.s.f.e.t. amplifiers. The technique utilises transistor gate-bias compensation controlled by the input signal level of the amplifier. For a constant output power of 0 dBm, an improvement in third-order intermodulation distortion product of up to 10 dB has been observed. The advantages and limitations of the technique are discussed.Keywords
This publication has 1 reference indexed in Scilit:
- Intermodulation Distortion in Microwave MESFET AmplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005