Effects of strain and Coulomb interaction on gain and refractive index in quantum-well lasers
- 1 May 1993
- journal article
- Published by Optica Publishing Group in Journal of the Optical Society of America B
- Vol. 10 (5) , 765-773
- https://doi.org/10.1364/josab.10.000765
Abstract
Optics InfoBase is the Optical Society's online library for flagship journals, partnered and copublished journals, and recent proceedings from OSA conferences.Keywords
This publication has 10 references indexed in Scilit:
- Many-body effects in the gain spectra of strained quantum wellsApplied Physics Letters, 1991
- Inhibited dark-line defect formation in strained InGaAs/AlGaAs quantum well lasersIEEE Photonics Technology Letters, 1990
- Linewidth enhancement factor in strained quantum well lasersApplied Physics Letters, 1990
- Band structure of quantum wells under crossed electric and magnetic fieldsPhysical Review B, 1988
- Continuous, high-power operation of a strained InGaAs/AlGaAs quantum well laserApplied Physics Letters, 1988
- Effective Bloch equations for semiconductorsPhysical Review B, 1988
- Reduction of lasing threshold current density by the lowering of valence band effective massJournal of Lightwave Technology, 1986
- Lasing transitions in GaAs/GaAs1−xPx strained-layer superlattices with x=0.1–0.5Applied Physics Letters, 1985
- Two-dimensional electron transport in semiconductor layers II: ScreeningJournal of Vacuum Science and Technology, 1981
- Motion of Electrons and Holes in Perturbed Periodic FieldsPhysical Review B, 1955