Copper bump bonding with electroless metal cap on 3 dimensional stacked structure

11 November 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 286-291
https://doi.org/10.1109/eptc.2000.906388

Abstract

CBB, the copper bump bonding process, can perform flip-chip bonding in 100 /spl mu/m pitch with a thin electroless metal cap on the surface, leading to interconnection of the copper through-hole electrodes on a 3D stacked structure. In this paper, the results of the technical studies on both the electroless plating process and the thermo-compressive bonding process are introduced, which are key technologies for expansion to interconnections with 20 /spl mu/m pitch to realize advanced 3D stacked structures.

Keywords

COPPER
STACKING
ELECTRODES
INTEGRATED CIRCUIT INTERCONNECTIONS
LARGE SCALE INTEGRATION
BONDING PROCESSES
PACKAGING
ETCHING
ENCAPSULATION
GOLD

This publication has 1 reference indexed in Scilit:

Multichip assembly with flipped integrated circuits
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003