Bound Excitons in GaP
- 15 September 1963
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 131 (6) , 2397-2404
- https://doi.org/10.1103/physrev.131.2397
Abstract
Three sharp lines , , and are seen in absorption and fluorescence near the band edge of GaP at 20°K and below. The lines are associated with excitons bound to defects. The Zeeman splitting of the lines allow the values of the holes and electrons to be determined. and both arise from an exciton bound to an ionized donor, the energy difference between and coming from electron-hole coupling. Both lines cooperate strongly with phonons, and this together with the splitting indicates a tightly bound state, yet it lies very close to the indirect exciton. Consequently , involves another exciton, probably made from an electron and hole both at k=0. Line is produced by an indirect exciton bound to a neutral donor, probably sulfur. Despite the possibility of valley-orbit splitting of the conduction band, the spectrum of is quite simple.
Keywords
This publication has 9 references indexed in Scilit:
- Zeeman Effect of Bound Excitons in Gallium PhosphidePhysical Review B, 1963
- Pair Spectra in GaPPhysical Review Letters, 1963
- Optical Properties of Bound Exciton Complexes in Cadmium SulfidePhysical Review B, 1962
- Light emission from forward biased p-n junctions in gallium phosphideSolid-State Electronics, 1962
- p-n-junction photovoltaic effect in zinc-doped GaPSolid-State Electronics, 1962
- "Mirror" Absorption and Fluorescence in ZnTePhysical Review Letters, 1962
- Band Structure and Transport Properties of Some 3–5 CompoundsJournal of Applied Physics, 1961
- Infrared Lattice Absorption of GaPPhysical Review B, 1960
- Optical absorption in n-type gallium phosphideJournal of Physics and Chemistry of Solids, 1959