Model for the potential drop in the silicon substrate for thin-film SOI MOSFETs
- 30 August 1990
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 26 (18) , 1462-1464
- https://doi.org/10.1049/el:19900938
Abstract
An analytical model is proposed for calculating the potential drop in the silicon substrate for thin-film SOI MOSFETs. The model is verified by numerical simulation, and indicates that the substrate potential causes a nonlinear shift of the threshold voltage for varying back gate voltages. Although this shift is shown to be rather limited for today's SOI fabrication parameters, it will increase if thinner buried oxides are used in the future.Keywords
This publication has 1 reference indexed in Scilit:
- High performance SOIMOSFET using ultra-thin SOI filmPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987