Microwave Characteristics of an Optically Controlled GaAs MESFET
- 1 January 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 31 (7) , 596-600
- https://doi.org/10.1109/TMTT.1983.1131551
Abstract
This paper presents the results of an experimental investigation of microwave characteristics of a GaAs MESFET under optically direct-controlled conditions. The gain, drain current, and S-parameters were measured under various optical conditions in the frequency region from 3.0 GHz to 8.0 GHz, and it was found that they can be controlled by varying the incident light intensity in the same manner as when varying the gate bias voltage. As applications of this phenomenon, optical/microwave transformers and an optically switched amplifier were investigated.Keywords
This publication has 5 references indexed in Scilit:
- GaAsFET Mount Structure Design for 30-GHz-Band Low-Noise AmplifiersIEEE Transactions on Microwave Theory and Techniques, 1982
- High Speed Photoresponse Mechanism of a GaAs-MESFETJapanese Journal of Applied Physics, 1980
- The OPFET: A new high speed optical detectorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1978
- GaAs m.e.s.f.e.t.: a high-speed optical detectorElectronics Letters, 1977
- Submicron Single-Gate and Dual-Gate GaAs MESFET's with Improved Low Noise and High Gain PerformanceIEEE Transactions on Microwave Theory and Techniques, 1976