Self-consistent screening of ionised impurities by drifting charge carriers in semiconductors

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Abstract
The streaming motion of the carriers is incorporated into a Lindhard-type screening of ionised impurities in a calculation of low-temperature mobilities of semiconductors. Assuming free carriers with a displaced Maxwellian momentum distribution as the simplest computationally feasible model, noticeable reductions of the mobilities are found for cases of high carrier drift. These effects are caused by the drift-induced reduction of the screening efficiency of the carriers and represent a non-linear (i.e. field-dependent) extension of the linear response, but are still within the low-field regime of negligible carrier heating.

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