Improved enhancement/depletion GaAs MOSFET using anodic oxide as the gate insulator

1 March 1978

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 25 (3) , 375-376
https://doi.org/10.1109/t-ed.1978.19084

Abstract

A GaAs MOSFET with a semi-insulating substrate is described, operating in either the enhancement or the deed depletion modes and showing the highest transconductance reported so far, and a rise time better than 1 ns. The behavior is fully explained by theC/Vcharacteristics of equivalent MOS capacitors.

Keywords

BEHAVIOR
CAPACITORS
SUBSTRATE
INSULATING
GAAS MOSFET
HIGHEST
THEC/VCHARACTERISTICS