Langmuir–Blodgett film passivation of unpinnedn‐type gallium arsenide surfaces

Publisher Website
Google Scholar
Abstract
This letter reports the results of the passivation of photochemically unpinned GaAs surfaces using Langmuir–Blodgett (LB) films. Metal‐insulator‐semiconductor structures are fabricated with LB films as the insulator. The high‐frequency capacitance versus voltage measurements show an order of magnitude decrease in the interface trap density (1011 cm−2 eV−1) as compared to the GaAs/anodic oxide interface. The hysteresis in the capacitance versus voltage curves was reduced from a 3‐V shift in the flatband voltage, to about a 1‐V shift, a level which has been seen in Si/LB film metal‐insulator‐semiconductor structures. Passivation with LB films is of interest because of their interesting electrical, chemical, and optical properties that can be used in GaAs‐based devices.