Optical properties of electron- and neutron-irradiated gallium arsenide
- 16 March 1972
- journal article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 10 (1) , 127-137
- https://doi.org/10.1002/pssa.2210100114
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Infrared absorption studies in neutron and electron-irradiated GaAsRadiation Effects, 1971
- Recovery of low temperature electron irradiation-induced damage inn-type gaasRadiation Effects, 1970
- DIRECT EVIDENCE OF DIVACANCY FORMATION IN SILICON BY ION IMPLANTATIONApplied Physics Letters, 1969
- Characteristics of Neutron Damage in SiliconPhysical Review B, 1968
- Chapter 6 Radiation EffectsPublished by Elsevier ,1968
- 1.8-, 3.3-, and 3.9-μ Bands in Irradiated Silicon: Correlations with the DivacancyPhysical Review B, 1966
- Change in Thermal Conductivity Upon Low-Temperature Electron Irradiation: InSbPhysical Review B, 1964
- Radiation Effects in GaAsJournal of Applied Physics, 1963
- Annealing of Electron-Irradiated GaAsPhysical Review B, 1962
- Transport Properties in Silicon and Gallium ArsenideJournal of Applied Physics, 1959