Note on unilateral power gain as applied to submicrometre transistors

24 November 1988

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 24 (24) , 1503-1505
https://doi.org/10.1049/el:19881026

Abstract

A theoretical analysis of the unilateral power gain applied to submicrometre transistors for high-frequency performance is presented. The new exact formulas shows that we can distinguish three resonant conditions. The conclusions are based on analysis of two different equivalent circuits.

Keywords

HIGH-FREQUENCY PERFORMANCE
MICROWAVE TRANSISTORS
MODELS
EQUIVALENT CIRCUITS
SUBMICRON TRANSISTORS
UNILATERAL POWER GAIN
MM-WAVE DEVICES
SUBMICROMETRE TRANSISTORS
FET
EXACT FORMULAS
RESONANT CONDITIONS
THEORETICAL ANALYSIS
EHF

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