Long-wavelength PINFET receiver OEIC on a GaAs-on-InP heterostructure
- 27 August 1987
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 23 (18) , 954-955
- https://doi.org/10.1049/el:19870671
Abstract
A long-wavelength PINFET OEIC has been fabricated on a GaAs-on-InP heterostructure for the first time. A receiver sensitivity as high as −31 dBm for 600Mbit/s NRZ has been obtained. The great potential of the GaAs-on-InP hetero-structure for high-performance, long-wavelength OEIC applications has been demonstrated.Keywords
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