Application Of Nonlinear Optical Properties And Melt Dynamics Of Crystalline Silicon To Optical Limiting Of 1 Micrometer Picosecond Radiation
- 1 January 1986
- journal article
- Published by SPIE-Intl Soc Optical Eng in Optical Engineering
- Vol. 25 (1) , 251157
- https://doi.org/10.1117/12.7973794
Abstract
We have recently demonstrated a passive, picosecond, Si optical-limiting switch for 1 um radiation. Since this device functions below, at, and above the Si melting threshold, its operating characteristics are determined by a large number of mechanisms including nonlinear transmission, self-diffraction, nonlinear reflection, phase transitions, and resolidification morphologies. Here, we review measurements in which we apply a wide variety of picosecond spectroscopic techniques in order to characterize these optically induced phenomena.Keywords
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