Power transistor crystal damage in inductive load switching
- 31 December 1977
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 20 (12) , 1026-1027
- https://doi.org/10.1016/0038-1101(77)90216-7
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Two-Dimensional Analysis of High-Voltage Power TransistorsIBM Journal of Research and Development, 1977
- Second breakdown and damage in junction devicesIEEE Transactions on Electron Devices, 1973