Homogeneous Heteroepitaxial NiSi2 Formation on (100)Si
- 1 December 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (12A) , L2329-2332
- https://doi.org/10.1143/jjap.29.l2329
Abstract
The mechanism of NiSi2/Si interface formation on (100)Si is examined. The interface roughness between NiSi2 and Si strongly depends on the substrate impurity species. A smooth interface is formed on As-doped Si, but the interface is highly faceted on the {111} plane on BF2-doped Si. The covalent radius of the impurity atoms strongly affects the interface formation. An interfacial distorted layer is observed only at the NiSi2/As-doped Si interface. This distorted layer could reduce the lattice strain between NiSi2 and Si. These results demonstrate the possibility of realizing a homogeneous epitaxial interface.Keywords
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