Essential Change in Crystal Qualities of GaN Films by Controlling Lattice Polarity in Molecular Beam Epitaxy
- 1 January 2000
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 39 (1A) , L16
- https://doi.org/10.1143/jjap.39.l16
Abstract
GaN heteroepitaxial growth on sapphire (0001) substrates was carried out by radio-frequency plasma-assisted molecular beam epitaxy (rf-MBE). A Ga-polarity growth was achieved by using an AlN high-temperature buffer layer. The epilayer polarity was characterized directly by coaxial impact collision ion scattering spectra (CAICISS). It was found that the properties of the GaN films showing Ga-face polarity, including their structural and electrical properties, were dramatically improved compared to those of films with N-face polarity. This important conclusion is considered to be a breakthrough in the realization of high-quality III-nitride films by MBE for device applications.Keywords
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