Study of the hot spot of an in-plane gate transistor by scanning Joule expansion microscopy
- 15 December 1998
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 84 (12) , 6917-6922
- https://doi.org/10.1063/1.368989
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Scanning Joule expansion microscopy at nanometer scalesApplied Physics Letters, 1998
- Sensor nanofabrication, performance, and conduction mechanisms in scanning thermal microscopyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1997
- Localized thermal analysis using a miniaturized resistive probeReview of Scientific Instruments, 1996
- Thermal imaging of thin films by scanning thermal microscopeJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Thermal imaging by atomic force microscopy using thermocouple cantilever probesReview of Scientific Instruments, 1995
- Scanning thermal imaging microscopy using composite cantilever probesApplied Physics Letters, 1995
- Scanning Near-Field Optical Microscopy and Scanning Thermal MicroscopyJapanese Journal of Applied Physics, 1994
- Tunable in-plane-gated (IPG) quantum wire structures fabricated with directly written focused ion beamsSurface Science, 1990
- In-plane-gated quantum wire transistor fabricated with directly written focused ion beamsApplied Physics Letters, 1990
- Scanning thermal profilerApplied Physics Letters, 1986