Electrical conductivity and phenomenology of switching in the glassy alloy Ge0.09As0.20Te0.71
- 1 November 1985
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 74 (2-3) , 195-204
- https://doi.org/10.1016/0022-3093(85)90066-3
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- The mechanism of threshold switching in amorphous alloysReviews of Modern Physics, 1978
- The influence of a high-conducting bubble in VO2 switching devicesPhysica Status Solidi (a), 1972
- Conduction in non-crystalline systemsPhilosophical Magazine, 1971
- Structural transformations in the chalcogenide systems GeAsTe and GeAsSeJournal of Non-Crystalline Solids, 1971
- A qualitative theory of electrical switching processes in monostable amorphous structuresJournal of Non-Crystalline Solids, 1970
- Non-ohmic properties of some amorphous semiconductorsJournal of Non-Crystalline Solids, 1970
- Thermal effect on switching phenomenon in chalcogenide amorphous semiconductorsSolid State Communications, 1970
- Electrical nature of the lock-on filament in amorphous semiconductorsSolid State Communications, 1970
- Switching characteristics of chalcogenide glassSolid State Communications, 1969
- Conduction and Electrical Switching in Amorphous Chalcogenide Semiconductor FilmsPhysical Review B, 1969