Reflection anisotropy spectroscopy, surface photovoltage spectroscopy, and contactless electroreflectance investigation of the InP/In0.53Ga0.47As(001) heterojunction system
- 1 July 1996
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 14 (4) , 3089-3094
- https://doi.org/10.1116/1.589069
Abstract
Using the optical methods of reflection anisotropy spectroscopy, surface photovoltage spectroscopy, and contactless electroreflectance, we have conducted an ex situ investigation of ~a! the InP/In0.53Ga0.47As~001! heterojunction interface as a function of InP overlayer thickness ~50-1000 nm! and ~b! the surfaces of n- and p-doped In0.53Ga0.47As~001!. All samples were fabricated by organometallic vapor phase epitaxy. The results from these optical probes make it possible to form a comprehensive quantitative picture of the InP/InGaAs heterojunction, including conduction and valence band offsets of 275 and 325 meV, respectively, as well as the ~001! surface of InGaAs ~surface Fermi level5200 mV from the conduction band edge! .© 1996 American Vacuum Society.Keywords
This publication has 0 references indexed in Scilit: