1.5 V bootstrapped BiCMOS logic gate
- 4 February 1993
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 29 (3) , 307-309
- https://doi.org/10.1049/el:19930210
Abstract
A 1.5 V bootstrapped BiCMOS (BS-BiCMOS) logic gate is presented. This design represents the first attempt to operate at a 1.5 V supply voltage without using complementary bipolar devices or MOS threshold voltage adjustment. The use of the bootstrapping technique described here provides a transient logic swing of 1.1 V and a 70% speed improvement over previously reported low-voltage designs.Keywords
This publication has 0 references indexed in Scilit: