Transport theory of the double heterojunction bipolar transistor based on current balancing concept

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Abstract
The effect of the two-interface conduction-band spikes of a double heterojunction bipolar transistor on the current transport was theoretically studied. The model was based on the current-balancing concept at both the emitter-base and base-collector heterojunctions. The analytical expressions for the current-voltage characteristics and the offset voltage are derived and relate to material parameters. It is found that the back-and-forth bouncing of carriers between two potential spikes and the associated recombination loss represented by an important parameter ΔE0 play an important role in determining the transistor characteristics. The theory also reveals that in order to eliminate the offset voltage of a double heterojunction bipolar transistor, the emitter and the collector must have the same area, the electron injection efficiency at the base-collector junction must be made close to unity, and the potential spike energy ΔE1 must be smaller than ΔE0.