Exciton Binding Energy in Semiconducting Single-Walled Carbon Nanotubes
- 1 August 2005
- journal article
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry B
- Vol. 109 (33) , 15671-15674
- https://doi.org/10.1021/jp053011t
Abstract
The exciton binding energy serves as a critical criterion for identification of the nature of elementary excitations (neutral excitons versus a pair of charged carriers) in semiconductor materials. An exciton binding energy of 0.41 eV is determined experimentally for a selected nanotube type, the (8,3) tube, confirming the excitonic nature of the elementary excitations. This determination is made from the energy difference between an electron-hole continuum and its precursor exciton. The electron-hole continuum results from dissociation of excitons following extremely rapid exciton-exciton annihilation and possibly also ultrafast relaxation from the second to the first exciton states and is characterized by distinct spectroscopic and dynamic signatures.Keywords
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