Porous silicon photoluminescence: type II-like recombination mechanism

29 April 1993

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 29 (9) , 790-791
https://doi.org/10.1049/el:19930528

Abstract

The Letter proposes a model to explain the PL mechanism in porous silicon. It was inspired by type II semiconductor interface PL behaviour. In this model, the PS radiative recombinations involve energy levels in the silicon oxide layer. This model takes into account quantum confinement and the energy threshold above which PS PL is observed.

Keywords

ENERGY THRESHOLD
MODEL
RADIATIVE RECOMBINATIONS
SI-SIO2
LIKE RECOMBINATION MECHANISM
ENERGY LEVELS
INTERFACE STATES
QUANTUM CONFINEMENT
TYPE II
POROUS SI PHOTOLUMINESCENCE

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