Electrical Characterization of C60 Evaporated Films Using MOS Structure
- 1 October 1995
- journal article
- research article
- Published by Taylor & Francis in Molecular Crystals and Liquid Crystals
- Vol. 267 (1) , 423-428
- https://doi.org/10.1080/10587259508034026
Abstract
Field effect and capacitance-voltage characteristics of vacuum evaporated C60 films are studied using metal-oxide-semiconductor structures such as metal / C60 / SiO2 / n+-Si or C60 / source-drain electrodes / SiO2 / n+-Si. The electrical conductivity, carrier type, carrier concentration, and carrier mobility are estimated from these measurements. In particular, electrical characteristics during the deposition in vacuum and the influence of oxygen and nitrogen gases are investigated by the in-situ field effect measurement.Keywords
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