IIIA-8 front-side illuminated InP/GaInAs/InP p-i-n photodiode with FWHM < 26 picoseconds
- 1 November 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 32 (11) , 2535-2536
- https://doi.org/10.1109/t-ed.1985.22330
Abstract
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