Effects of annealing conditions on the properties of tantalum oxide films on silicon substrates
- 1 June 1992
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 21 (6) , 635-639
- https://doi.org/10.1007/bf02655432
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- UV-O/sub 3/ and dry-O/sub 2/: Two-step-annealed chemical vapor-deposited Ta/sub 2/O/sub 5/ films for storage dielectrics of 64-Mb DRAMsIEEE Transactions on Electron Devices, 1991
- Preparation and Properties of Ta2 O 5 Films by LPCVD for ULSI ApplicationJournal of the Electrochemical Society, 1990
- Interfacial Oxidation of Silicon Substrates Through Ta2 O 5 FilmsJournal of the Electrochemical Society, 1988
- Anodic SiO2 for Low Temperature Gate DielectricsPublished by Springer Nature ,1988
- Ultra-thin Ta2O5dielectric film for high-speed bipolar memoriesIEEE Transactions on Electron Devices, 1987
- Charge generation in thin SiO2 polysilicon-gate MOS capacitorsSolid-State Electronics, 1987
- Selective Studies of Crystalline Ta2 O 5 FilmsJournal of the Electrochemical Society, 1986
- Leakage‐Current Increase in Amorphous Ta2 O 5 Films Due to Pinhole Growth during Annealing Below 600°CJournal of the Electrochemical Society, 1983
- Electrical properties of amorphous tantalum pentoxide thin films on siliconJournal of Applied Physics, 1983